posted on 2023-06-09, 18:42authored byNiko Munzenrieder, Julio Costa, Luisa Petti, Giuseppe Cantarella, Tilo Meister, Koichi Ishida, Corrado Carta, Frank Ellinger
A unique requirement of flexible electronic systems is the need to simultaneously optimize their electrical and mechanical performance. Amorphous InGaZnO thin-film transistors (TFTs) fabricated on free-standing large-area plastic substrates address this issue by providing a carrier mobility >10 cm 2 /Vs, and bendability down to radii as small as 25 µm. At the same time, limitations such as a constrained minimum lateral feature size, the lack of appropriate p-type materials, or the influence of strain have to be considered when designing circuits. Here, models describing the scaling and bending behavior of flexible InGaZnO TFTs, together with the design of strain insensitive circuits operating at megahertz frequencies are presented.
History
Publication status
Published
File Version
Accepted version
Journal
2019 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)