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Anomaly enhancement of the dislocation velocity in SiC
journal contribution
posted on 2023-06-07, 22:58 authored by Gianluca Savini, Giancarlo Savini, Angela Marocchi, Irene Suarez-Martinez, Gemma Haffenden, Malcolm I Heggie, Sven ÖbergUnder forward bias SiC p-i-n diodes exhibit an anomaly enhancement of the partial dislocation mobility. Through first-principle calculations, we have shown that Peierls barriers and electrical activities are strongly dependent on the dislocation core structures. Further we have found that solitons or antiphase defects along the dislocation line cannot explain alone the enhancement of the dislocation velocity. We have proposed a new theoretical model that can explain the enhancement of the dislocation mobility under forward bias. This model can be applied to any semiconductor materials in order to predict the behaviour under electron-hole plasma injections
History
Publication status
- Published
Journal
Physica B: Condensed MatterISSN
09214526External DOI
Volume
401-40Page range
62-66Department affiliated with
- Chemistry Publications
Full text available
- No
Peer reviewed?
- Yes