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Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes

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posted on 2023-06-09, 00:08 authored by Grammatiki Lioliou, M C Mazzillo, A Sciuto, Anna BarnettAnna Barnett
Fabrication and electrical and optical characterization of 4H-SiC Schottky UV photodetectors with nickel silicide interdigitated contacts is reported. Dark capacitance and current measurements as a function of applied voltage over the temperature range 20 °C – 120 °C are presented. The results show consistent performance among devices. Their leakage current density, at the highest investigated temperature (120 °C), is in the range of nA/cm2 at high internal electric field. Properties such as barrier height and ideality factor are also computed as a function of temperature. The responsivities of the diodes as functions of applied voltage were measured using a UV spectrophotometer in the wavelength range 200 nm - 380 nm and compared with theoretically calculated values. The devices had a mean peak responsivity of 0.093 A/W at 270 nm and -15 V reverse bias.

History

Publication status

  • Published

File Version

  • Published version

Journal

Optics Express

ISSN

1094-4087

Publisher

Optical Society of America

Issue

17

Volume

23

Page range

21657-21670

Department affiliated with

  • Engineering and Design Publications

Full text available

  • Yes

Peer reviewed?

  • Yes

Legacy Posted Date

2016-01-27

First Open Access (FOA) Date

2016-01-27

First Compliant Deposit (FCD) Date

2016-01-27

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