oe-23-17-21657.pdf (1.75 MB)
Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes
journal contribution
posted on 2023-06-09, 00:08 authored by Grammatiki LioliouGrammatiki Lioliou, M C Mazzillo, A Sciuto, Anna BarnettAnna BarnettFabrication and electrical and optical characterization of 4H-SiC Schottky UV photodetectors with nickel silicide interdigitated contacts is reported. Dark capacitance and current measurements as a function of applied voltage over the temperature range 20 °C – 120 °C are presented. The results show consistent performance among devices. Their leakage current density, at the highest investigated temperature (120 °C), is in the range of nA/cm2 at high internal electric field. Properties such as barrier height and ideality factor are also computed as a function of temperature. The responsivities of the diodes as functions of applied voltage were measured using a UV spectrophotometer in the wavelength range 200 nm - 380 nm and compared with theoretically calculated values. The devices had a mean peak responsivity of 0.093 A/W at 270 nm and -15 V reverse bias.
History
Publication status
- Published
File Version
- Published version
Journal
Optics ExpressISSN
1094-4087Publisher
Optical Society of AmericaExternal DOI
Issue
17Volume
23Page range
21657-21670Department affiliated with
- Engineering and Design Publications
Full text available
- Yes
Peer reviewed?
- Yes