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Flexible self-aligned double-gate IGZO TFT
journal contribution
posted on 2023-06-08, 19:59 authored by Niko Munzenrieder, P Voser, L Petti, C Zysset, L Buthe, C Vogt, G A Salvatore, G TrosterIn this letter, flexible double-gate (DG) thin-film transistors (TFTs) based on InGaZnO4 and fabricated on free standing plastic foil, using self-alignment (SA) are presented. The usage of transparent indium-tin-oxide instead of opaque metals enables SA of source-, drain-, and top-gate contacts. Hence, all layers, which can cause parasitic capacitances, are structured by SA. Compared with bottom-gate reference TFTs fabricated on the same substrate, DG TFTs exhibit a by 68% increased transconductance and a subthreshold swing as low as 109 mV/dec decade (-37%). The clockwise hysteresis of the DG TFTs is as small as 5 mV. Because of SA, the source/drain to gate overlaps are as small as ˜ 1 µm leading to parasitic overlap capacitances of 5.5 fF µm-1. Therefore a transit frequency of 5.6 MHz is measured on 7.5 µm long transistors. In addition, the flexible devices stay fully operational when bent to a tensile radius of 6 mm.
History
Publication status
- Published
Journal
IEEE Electron Device LettersISSN
0741-3106Publisher
Institute of Electrical and Electronics Engineers (IEEE)External DOI
Issue
1Volume
35Page range
69-71Department affiliated with
- Engineering and Design Publications
Full text available
- No
Peer reviewed?
- Yes