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Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators
Version 2 2023-06-22, 13:10
Version 1 2023-06-09, 04:27
journal contribution
posted on 2023-06-22, 13:10 authored by Alwin Daus, Christian Vogt, Niko Munzenrieder, Luisa Petti, Stefan Knobelspies, Giuseppe Cantarella, Mathieu Luisier, Giovanni A Salvatore, Gerhard TrösterNo description supplied
History
Publication status
- Published
File Version
- Published version
Journal
Journal of Applied PhysicsISSN
0021-8979Publisher
AIP PublishingExternal DOI
Issue
24Volume
120Page range
244501Department affiliated with
- Engineering and Design Publications
Research groups affiliated with
- Sensor Technology Research Centre Publications
Full text available
- Yes
Peer reviewed?
- Yes
Legacy Posted Date
2017-01-03First Open Access (FOA) Date
2017-01-03First Compliant Deposit (FCD) Date
2016-12-30Usage metrics
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