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Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector

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posted on 2025-05-09, 14:08 authored by G Aad, E Aakvaag, B Abbott, S Abdelhameed, K Abeling, NJ Abicht, SH Abidi, M Aboelela, A Aboulhorma, H Abramowicz, H Abreu, Y Abulaiti, BS Acharya, A Ackermann, CA Bourdarios, L Adamczyk, SV Addepalli, MJ Addison, J Adelman, A Adiguzel, T Adye, AA Affolder, Y Afik, MN Agaras, J Agarwala, A Aggarwal, C Agheorghiesei, F Ahmadov, WS Ahmed, S Ahuja, X Ai, G Aielli, A Aikot, M Ait Tamlihat, B Aitbenchikh, M Akbiyik, TPA Åkesson, AV Akimov, D Akiyama, NN Akolkar, S Aktas, K Al Khoury, GL Alberghi, J Albert, P Albicocco, GL Albouy, S Alderweireldt, ZL Alegria, M Aleksa, IN Aleksandrov, C Alexa, T Alexopoulos, F Alfonsi, M Algren, M Alhroob, B Ali, HMJ Ali, S Ali, SW Alibocus, M Aliev, G Alimonti, W Alkakhi, C Allaire, Benedict AllbrookeBenedict Allbrooke, JF Allen, CAA Flores, PP Allport, A Aloisio, F Alonso, C Alpigiani, ZMK Alsolami, MA Estevez, AA Fernandez, MA Cardoso, MG Alviggi, M Aly, YA Coutinho, A Ambler, C Amelung, M Amerl, CG Ames, D Amidei, B Amini, KJ Amirie, SPA Dos Santos, KR Amos, S An, V Ananiev, C Anastopoulos, T Andeen, JK Anders, AC Anderson, SY Andrean, A Andreazza, S Angelidakis, A Angerami, AV Anisenkov, A Annovi, C Antel, E Antipov
Pixel sensors in 3D technology equip the outer ends of the staves of the Insertable B Layer (IBL), the innermost layer of the ATLAS Pixel Detector, which was installed before the start of LHC Run 2 in 2015. 3D pixel sensors are expected to exhibit more tolerance to radiation damage and are the technology of choice for the innermost layer in the ATLAS tracker upgrade for the HL-LHC programme. While the LHC has delivered an integrated luminosity of ≃ 235 fb−1 since the start of Run 2, the 3D sensors have received a non-ionising energy deposition corresponding to a fluence of ≃ 8.5 × 1014 1 MeV neutron-equivalent cm−2 averaged over the sensor area. This paper presents results of measurements of the 3D pixel sensors’ response during Run 2 and the first two years of Run 3, with predictions of its evolution until the end of Run 3 in 2025. Data are compared with radiation damage simulations, based on detailed maps of the electric field in the Si substrate, at various fluence levels and bias voltage values. These results illustrate the potential of 3D technology for pixel applications in high-radiation environments.

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Publication status

  • Published

File Version

  • Published version

Journal

Journal of Instrumentation

ISSN

1748-0221

Publisher

IOP Publishing

Issue

10

Volume

19

Page range

P10008-P10008

Department affiliated with

  • Physics and Astronomy Publications

Institution

University of Sussex

Full text available

  • Yes

Peer reviewed?

  • Yes

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