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X-ray detection with zinc-blende (cubic) GaN Schottky diodes

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posted on 2023-06-09, 02:08 authored by T Gohil, J Whale, Grammatiki Lioliou, S V Novikov, C T Foxon, A J Kent, Anna BarnettAnna Barnett
The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200?µm and 400?µm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35?keV. The diodes were also electrically characterized: capacitance, implied depletion width and dark current measurements as functions of applied bias at room temperature are presented. At -5?V reverse bias, the capacitances of the diodes were measured to be (84.05?±?0.01) pF and (121.67?±?0.02) pF, respectively. At -5?V reverse bias, the dark current densities of the diodes were measured to be (347.2?±?0.4) mA cm-2 and (189.0?±?0.2) mA cm-2, respectively. The Schottky barrier heights of the devices (0.52?±?0.07) eV and (0.63?±?0.09) eV, respectively, were extracted from the forward dark current characteristics.

Funding

High Efficiency Betavoltaic Cells; G1455; STFC-SCIENCE AND TECHNOLOGY FACILITIES COUNCIL; ST/M002772/1

University of Nottingham Impact Acceleration Account

PhD studentship; EPSRC

In situ X-ray Fluorescence Spectroscopy for Deep Sea Mining Applications; G1537; STFC-SCIENCE AND TECHNOLOGY FACILITIES COUNCIL; ST/M004635/1

History

Publication status

  • Published

File Version

  • Published version

Journal

Scientific Reports

ISSN

2045-2322

Publisher

Nature Publishing Group

Volume

6

Page range

29535

Department affiliated with

  • Engineering and Design Publications

Full text available

  • Yes

Peer reviewed?

  • Yes

Legacy Posted Date

2016-07-13

First Open Access (FOA) Date

2016-07-13

First Compliant Deposit (FCD) Date

2016-07-13

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