File(s) not publicly available
Structure and energy of partial dislocations in wurtzite-GaN
presentation
posted on 2023-06-07, 21:16 authored by G Savini, A T Blumenau, M I Heggie, S ÖbergFirst-principle calculations have shown that both the partials can be electrically active. In particular we have shown the Ga(g) core partials are a good candidate for the observed absorption peak at 2.4 eV revealed by energy loss spectroscopy measurements. The symmetric and asymmetric reconstructions have relatively close formation energies. Our results have suggested that the asymmetric reconstructions, characterized by strong bonds along the dislocation line are favourable in intrinsic materials. However, in strongly p and n-type materials or in high stress field the symmetric reconstructions can become energetically more stable. These reconstructions are always electrically active with a deep band across the forbidden gap.
History
Publication status
- Published
ISSN
18626351External DOI
Issue
8Volume
4Page range
2945-2949Presentation Type
- paper
Event name
International Conference on Extended Defects in Semiconductors, EDS 2006; HalleEvent location
Halle; 17 September 2006 through 22 September 2006; Code 72959Event type
conferenceDepartment affiliated with
- Chemistry Publications
Notes
Publish in: Physica Status Solidi (C) Current Topics in Solid State PhysicsFull text available
- No
Peer reviewed?
- Yes