Structure and energy of the 90° partial dislocations in wurtzite-GaN
presentation
posted on 2023-06-07, 20:09authored byG Savini, M I Heggie, C P Ewels, N Martsinovich, R Jones, A T Blumenau
90° Shockley partial dislocations in GaN are investigated by first-principles calculations. This work is focussed on the electrical properties of dislocation cores, and on investigating the electrical fields around these defects. The band structure analysis shows that both the a and ß core partials possess a midgap state. The ß-core dislocations give rise to a donor level Ev + 0.87 eV that might explain the absorption peak at 2.4 eV revealed by energy loss spectroscopy measurements. The acceptor level Ev + 1.11 eV localized at the a-core dislocations might contribute to the yellow luminescence. These dislocations experience a substantial charge polarization along the [0001] growth axis. In addition, we show that these dislocations tend to charge in a high stress field.
History
Publication status
Published
ISSN
02555476
Volume
483-48
Page range
1057-1060
Presentation Type
paper
Event name
5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
Event location
Bologna; 31 August 2004 through 4 September 2004; Code 70376